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FDMC035N10X1 n-channel powertrench ? mosfet www.onsemi.com semiconductor components industries, llc, 2017 publication order number: may, 2017, rev. 1.0 FDMC035N10X1 1 FDMC035N10X1 n-channel powertrench ? mosfet 100 v, 5.5 a, 37 m features ? max r ds(on) = 37 m at v gs = 10 v, i d = 5.5 a ? max r ds(on) = 41 m at v gs = 6 v, i d = 5.0 a ? low profile - 0.8 mm max in power 33 ? 100% uil tested ? rohs compliant general description this n-channel mosfet is produced using on semiconductor?s advanced powertrench ? technology. this very high density process is espec ially tailored to minimize on- state resistance and optimized for hot swap application. applications ? dc - dc conversion ? pse switch bottom top pin 1 pin 1 g d s s s d d d s s s g d d d d power 33 mosfet maximum ratings t c = 25c unless otherwise noted. thermal charac teristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 100 v v gs gate to source voltage 20 v i d -continuous t a = 25c (note 1a) 5.5 a -pulsed (note 4) 13 0 e as single pulse avalanche energy (note 3) 181 mj p d power dissipation t c = 25c 50 w power dissipation t a = 25c (note 1a) 2.3 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction-to-case 2.5 c/w r ja thermal resistance, junction-to-ambient (note 1a) 53 device marking device package reel size tape width quantity fdmc035n10 FDMC035N10X1 power 33 13?? 12 mm 3000 units
FDMC035N10X1 n-channel powertrench ? mosfet www.onsemi.com 2 electrical characteristics t j = 25c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 100 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c 107 mv/c i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 2.0 2.5 4.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25c -7 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 5.5 a 30 37 m v gs = 6 v, i d = 5.0 a3241 v gs = 10 v, i d = 5.5 a, t j = 125c 60 75 g fs forward transconductance v ds = 5 v, i d = 5.5 a18s c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1mhz 1910 2675 pf c oss output capacitance 109 pf c rss reverse transfer capacitance 64 pf r g gate resistance 0.1 2.6 5.2 t d(on) turn-on delay time v dd = 50 v, i d = 5.5 a, v gs = 10 v, r gen = 6 12 21 ns t r rise time 713ns t d(off) turn-off delay time 56 90 ns t f fall time 14 25 ns q g total gate charge v gs = 0 v to 10 v v dd = 50 v, i d = 5.5 a 41 58 nc q g total gate charge v gs = 0 v to 6 v2738nc q gs gate to source charge 6.3 nc q gd gate to drain ?miller? charge 11 nc v sd source-drain diode forward voltage v gs = 0 v, i s = 5.5 a (note 2) 0.8 1.3 v t rr reverse recovery time i f = 5.5 a, di/dt = 100 a/ s 42 68 ns q rr reverse recovery charge 58 92 nc 53c/w when mounted on a 1 in 2 pad of 2 oz copper 125c/w when mounted on a minimum pad a) b) g df ds sf ss g df ds sf ss notes: 1. r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. e as of 181 mj is based on starting t j = 25 c; n-ch: l = 3 mh, i as = 11 a, v dd = 100 v, v gs = 10 v. 100% test at l = 0.1 mh, i as = 35 a. 4. pulsed id please refer to fig 11 soa graph for more details. 5. computed continuous current limited to ma x junction temperature only, actual contin uous current will be limited by thermal & electro-mechanical application board design.
FDMC035N10X1 n-channel powertrench ? mosfet www.onsemi.com 3 typical characteristics t j = 25 c unless otherwise noted. figure 1. 0.00.51.01.52.02.53.0 0 10 20 30 40 v gs = 5 v v gs = 6 v v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 10 v v gs = 4 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 8 16 24 32 40 0 1 2 3 v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 5 v v gs = 6 v v gs = 4 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs. drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 i d = 5.5 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs. junction temperature figure 4. 345678910 0 50 100 150 200 t j = 125 o c i d = 5.5 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s . g a t e t o source voltage figure 5. transfer characteristics 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 8 16 24 32 40 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.00.20.40.60.81.01.2 0.001 0.01 0.1 1 10 40 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs. source current
FDMC035N10X1 n-channel powertrench ? mosfet www.onsemi.com 4 figure 7. 0 1020304050 0 2 4 6 8 10 i d = 5.5 a v dd = 75 v v dd = 25 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 50 v gate charge characteristics figure 8. 0.1 1 10 100 10 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s . d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 100 1 10 100 t j = 125 o c t j = 25 o c t j = 100 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 1 2 3 4 v gs = 6 v r t ja = 125 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs. case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.01 0.1 1 10 100 600 0.01 0.1 1 10 100 1000 60 ms 300 p s 10 p s curve bent to measured data 100 p s 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c figure 12. 10 -5 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.1 1 10 100 1000 10000 100000 single pulse r t ja = 125 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted.
FDMC035N10X1 n-channel powertrench ? mosfet www.onsemi.com 5 figure 13. 10 -5 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 2 single pulse duty cycle-descending order r(t), normalized effective transient thermal resistance t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: z t ja (t) = r(t) x r t ja r t ja = 125 o c/w duty cycle, d = t 1 / t 2 peak t j = p dm x z t ja (t) + t a junction to ambient transient thermal response curve typical characteristics t j = 25 c unless otherwise noted.
FDMC035N10X1 n-channel powertrench ? mosfet www.onsemi.com 6 notes: unless otherwise specified a) package standard reference: jedec mo-240, issue a, var. ba, b) all dimensions are in millimeters. c) dimensions do not include burrs or mold flash. mold flash or burrs does not exceed 0.10mm. d) dimensioning and tolerancing per asme y14.5m-2009. e) drawing file name: mkt-pqfn08srev1 8 1 5 4 4 1 85 land pattern recommendation 14 85 pkg c l pkg l c pkg l c l c sym pkg c l a b detail a scale: 2x see detail a 3.40 3.20 3.40 3.20 1.95 0.65 0.37 0.27 (8x) 0.60 0.40 1.9 9 1.7 9 0.10 c a b (0.34) (2.27) (0.52 typ) 0.25 0.15 0.80 0.70 0.10 c 0.08 c 0.05 0.00 c seating plane 2.37 min (0.45) (0.40) (0.65) 2.15 min 0.70 min 0.42 min (8x) 1.95 0.65 pin 1 indicator (0.33) typ dimensional outlin e and pad layout on semiconductor and the on logo are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidi aries in the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do v ary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer's technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconductor products are not d esigned, intended, or authorized for use as a critical component in life support systems or any fda class 3 medi cal devices or medical devices with a same or similar classif ication in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against al l claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such uni ntended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufa cture of the part. on semiconductor is an equal opportunity/a ffirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ? semiconductor components industries, llc
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